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R6020ENZM12C8

R6020ENZM12C8

MOSFET N-CH 600V 20A TO3

R6020ENZM12C8

R6020ENZM12C8

Image is for reference, please contact us to get the real picture

Part No :

R6020ENZM12C8

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 20A TO3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
709370 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 30 - Aug 03 2025
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.4 nF @ 25 V
FET Feature:-
Power Dissipation (Max):120W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-3P-3 Full Pack
R6020ENZM12C8 is available at GangBo-ic.com, Please review product page below for detailed information, including R6020ENZM12C8 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6020ENZM12C8 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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