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HGTD1N120BNS9A

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IGBT 1200V 5.3A 60W TO252AA

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HGTD1N120BNS9A

HGTD1N120BNS9A

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Part No :

HGTD1N120BNS9A

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 5.3A 60W TO252AA
Catalog
Transistors - IGBTs - Single
Availability
17588 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 19 - Jul 23 2025
PDF
HGTD1N120BNS9A PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):5.3 A
Current - Collector Pulsed (Icm):6 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 1A
Power - Max:60 W
Switching Energy:70µJ (on), 90µJ (off)
Input Type:Standard
Gate Charge:14 nC
Td (on/off) @ 25°C:15ns/67ns
Test Condition:960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252AA
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