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IGP01N120H2

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POWER BIPOLAR TRANSISTOR NPN

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IGP01N120H2

IGP01N120H2

Image is for reference, please contact us to get the real picture

Part No :

IGP01N120H2

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR NPN
Catalog
Transistors - IGBTs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):3.2 A
Current - Collector Pulsed (Icm):3.5 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 1A
Power - Max:28 W
Switching Energy:140µJ
Input Type:Standard
Gate Charge:8.6 nC
Td (on/off) @ 25°C:13ns/370ns
Test Condition:800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:PG-TO220-3
IGP01N120H2 is available at GangBo-ic.com, Please review product page below for detailed information, including IGP01N120H2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IGP01N120H2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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