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FGB7N60UNDF

FGB7N60UNDF

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Part No :

FGB7N60UNDF

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
10994 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 04 - May 08 2025
PDF
FGB7N60UNDF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):14 A
Current - Collector Pulsed (Icm):21 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 7A
Power - Max:83 W
Switching Energy:99µJ (on), 104µJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:5.9ns/32.3ns
Test Condition:400V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr):32.3 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
FGB7N60UNDF is available at GangBo-ic.com, Please review product page below for detailed information, including FGB7N60UNDF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGB7N60UNDF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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