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HGT1S10N120BNST

HGT1S10N120BNST

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HGT1S10N120BNST

HGT1S10N120BNST

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Part No :

HGT1S10N120BNST

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 35A 298W TO263AB
Catalog
Transistors - IGBTs - Single
Availability
675167 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2025
PDF
HGT1S10N120BNST PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:320µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
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