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SIT1602BI-81-33S-4.096000X

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MEMS OSC XO 4.0960MHZ H/LV-CMOS

IGD01N120H2BUMA1

IGD01N120H2BUMA1

POWER BIPOLAR TRANSISTOR, 3.2A I

25-CBSA-5.75X5.75X0.225

25-CBSA-5.75X5.75X0.225

RF SHIELD 5.75" X 5.75" SMD T/H

DSC1101DE2-100.0000

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MEMS OSC LOW POWER LVCMOS 20C-7

IGD01N120H2BUMA1

IGD01N120H2BUMA1

Image is for reference, please contact us to get the real picture

Part No :

IGD01N120H2BUMA1

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 3.2A I
Catalog
Transistors - IGBTs - Single
Availability
12476 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2025
PDF
IGD01N120H2BUMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):3.2 A
Current - Collector Pulsed (Icm):3.5 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 1A
Power - Max:28 W
Switching Energy:140µJ
Input Type:Standard
Gate Charge:8.6 nC
Td (on/off) @ 25°C:13ns/370ns
Test Condition:800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:PG-TO252-3
IGD01N120H2BUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IGD01N120H2BUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IGD01N120H2BUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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