







MEMS OSC XO 4.0000MHZ LVCM LVTTL
MEMS OSC XO 35.3280MHZ CMOS SMD
IGBT 650V 60A 58W TO3PF
SWITCH TOGGLE 4PDT 5A 120V
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 60 A |
| Current - Collector Pulsed (Icm): | 120 A |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
| Power - Max: | 58 W |
| Switching Energy: | 151µJ (on), 293µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 149 nC |
| Td (on/off) @ 25°C: | 37ns/146ns |
| Test Condition: | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3PFM, SC-93-3 |
| Supplier Device Package: | TO-3PF-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IKA15N65H5XKSA1IR (Infineon Technologies) |
IGBT 650V 14A TO220-3 |
|
|
IRGB4060DPBFRochester Electronics |
IGBT, 16A I(C), 600V V(BR)CES, N |
|
|
NGB15N41ACLT4GRochester Electronics |
IGBT |
|
|
FGA6540WDFRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
|
IKZA75N65RH5XKSA1IR (Infineon Technologies) |
INDUSTRY 14 |
|
|
STGWA30IH65DFSTMicroelectronics |
TRENCH GATE FIELD-STOP 650 V, 30 |
|
|
FGA40T65SHDFRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
|
IRGP4790DPBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
|
IKW08T120FKSA1IR (Infineon Technologies) |
IGBT 1200V 16A TO247-3 |
|
|
IGP10N60TATMA1Rochester Electronics |
IGBT WITHOUT ANTI-PARALLEL DIODE |
|
|
IXXH40N65B4H1Wickmann / Littelfuse |
IGBT 650V 120A 455W TO247AD |
|
|
AUIRGP76524D0IR (Infineon Technologies) |
DIODE IGBT 680V 24A TO-247AC |
|
|
NGTB40N65FL2WGRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |