







MEMS OSC XO 72.0000MHZ H/LV-CMOS
IGBT 1000V 24A 100W TO263AA
IC EEPROM 256KBIT PAR 28SOIC
TERM BLOCK PLUG 19POS 5.08MM
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | EEPROM |
| Technology: | EEPROM |
| Memory Size: | 256Kb (32K x 8) |
| Memory Interface: | Parallel |
| Clock Frequency: | - |
| Write Cycle Time - Word, Page: | 3ms |
| Access Time: | 90 ns |
| Voltage - Supply: | 4.5V ~ 5.5V |
| Operating Temperature: | -40°C ~ 125°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IDT71V3556S150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
CY62136VNLL-70ZSXETCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
|
AS4C256M8D3-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
|
IS43TR16256A-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
|
W97BH6KBVX2IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
|
AT49F512-70VCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
|
MT48H4M16LFB4-8 ITMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
|
MT48V4M32LFF5-8:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
|
IS42S16160D-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
7006S35PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
|
AT29BV020-20JURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
|
SST39VF400A-70-4C-C1QERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48XFLGA |
|
|
W632GU6KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |