IC DRAM 512MBIT PARALLEL 66TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.5V ~ 2.7V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CG7782AACypress Semiconductor |
IC SRAM MICROPOWER |
|
MT53D512M32D2NP-046 WT:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
MT53D1024M64D8NW-062 WT ES:DMicron Technology |
IC DRAM 64GBIT 1600MHZ 432VFBGA |
|
MT29F4G08ABAFAH4-AITES:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
AT24C512C-CUM-T-923Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DBGA |
|
24AA256-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 400KHZ DIE |
|
MT53B1G32D4NQ-062 WT:D TRMicron Technology |
LPDDR4 32G 1GX32 FBGA QDP |
|
MT46H16M32LFCX-6 IT:BMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
7134SA70JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
MT53D4DCFL-DCMicron Technology |
LPDDR4 FBGA QDP |
|
M27C512-45C1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT29F384G08EBHBBB0KB3WC1-RMicron Technology |
IC FLASH 384GBIT PARALLEL WAFER |
|
MT48H16M32LFB5-6 AAT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |