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C2M0160120D

C2M0160120D

SICFET N-CH 1200V 19A TO247-3

C2M0160120D

C2M0160120D

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Part No :

C2M0160120D

Manufacturer
Wolfspeed - a Cree company
Description
SICFET N-CH 1200V 19A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10577 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 16 - May 20 2024
PDF
C2M0160120D PDF
Type Description
Series:Z-FET™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id:2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:32.6 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:527 pF @ 800 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
C2M0160120D is available at GangBo-ic.com, Please review product page below for detailed information, including C2M0160120D price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for C2M0160120D to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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