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TK35E08N1,S1X

TK35E08N1,S1X

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Part No :

TK35E08N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 80V 55A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
349034 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
TK35E08N1,S1X PDF
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 40 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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