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STB33N60M2

STB33N60M2

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STB33N60M2

STB33N60M2

Image is for reference, please contact us to get the real picture

Part No :

STB33N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 26A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11226 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 17 - Jul 21 2025
PDF
STB33N60M2 PDF
Type Description
Series:MDmesh™ II Plus
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB33N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STB33N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB33N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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