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IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

MOSFET N-CH 120V 75A TO220-3

IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

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Part No :

IPP114N12N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 75A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10331 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 04 - Jun 08 2024
PDF
IPP114N12N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 60 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP114N12N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP114N12N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP114N12N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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