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IRF1607PBF

IRF1607PBF

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Part No :

IRF1607PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 142A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
518451 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2025
PDF
IRF1607PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:142A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7.5mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF1607PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1607PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1607PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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