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SPD03N50C3ATMA1

SPD03N50C3ATMA1

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Part No :

SPD03N50C3ATMA1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17131 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 08 - May 12 2025
PDF
SPD03N50C3ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-1
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SPD03N50C3ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPD03N50C3ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPD03N50C3ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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