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SQS482ENW-T1_GE3

SQS482ENW-T1_GE3

MOSFET N-CH 30V 16A PPAK1212-8W

SQS482ENW-T1_GE3

SQS482ENW-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQS482ENW-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 16A PPAK1212-8W
Catalog
Transistors - FETs, MOSFETs - Single
Availability
971297 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
PDF
SQS482ENW-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1865 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8W
Package / Case:PowerPAK® 1212-8W
SQS482ENW-T1_GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SQS482ENW-T1_GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SQS482ENW-T1_GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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