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IRFH3707TR2PBF

IRFH3707TR2PBF

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IRFH3707TR2PBF

IRFH3707TR2PBF

Image is for reference, please contact us to get the real picture

Part No :

IRFH3707TR2PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 12A/29A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
020602 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 07 - Jun 11 2025
PDF
IRFH3707TR2PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3x3)
Package / Case:8-PowerVDFN
IRFH3707TR2PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH3707TR2PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH3707TR2PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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