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IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1

MOSFET N-CH 150V 100A TO263-3

IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1

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Part No :

IPB072N15N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 100A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
542454 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 03 - May 07 2025
PDF
IPB072N15N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:7.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5470 pF @ 75 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB072N15N3GE8187ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB072N15N3GE8187ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB072N15N3GE8187ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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