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SPB10N10L

SPB10N10L

MOSFET N-CH 100V 10.3A TO263-3

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SPB10N10L

SPB10N10L

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Part No :

SPB10N10L

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 10.3A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
392839 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
SPB10N10L PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id:2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:444 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB10N10L is available at GangBo-ic.com, Please review product page below for detailed information, including SPB10N10L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB10N10L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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