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IRF1010EZ

IRF1010EZ

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Part No :

IRF1010EZ

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 75A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
504250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
PDF
IRF1010EZ PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF1010EZ is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1010EZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1010EZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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