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FQB2N90TM

FQB2N90TM

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Part No :

FQB2N90TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 900V 2.2A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
174417 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 29 - Jul 03 2025
PDF
FQB2N90TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB2N90TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB2N90TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB2N90TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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