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PHD18NQ10T,118

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MOSFET N-CH 100V 18A DPAK

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PHD18NQ10T,118

PHD18NQ10T,118

Image is for reference, please contact us to get the real picture

Part No :

PHD18NQ10T,118

Manufacturer
NXP Semiconductors
Description
MOSFET N-CH 100V 18A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
714471 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
PHD18NQ10T,118 PDF
Type Description
Series:TrenchMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 25 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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