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RDN100N20FU6

RDN100N20FU6

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Part No :

RDN100N20FU6

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 10A TO220FN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
734573 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 11 - Jul 15 2025
PDF
RDN100N20FU6 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:543 pF @ 10 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FN
Package / Case:TO-220-3 Full Pack
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