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SI3867DV-T1-E3

SI3867DV-T1-E3

MOSFET P-CH 20V 3.9A 6TSOP

SI3867DV-T1-E3

SI3867DV-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI3867DV-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 3.9A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
814581 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 11 - Jul 15 2025
PDF
SI3867DV-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:51mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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