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FQI4N20LTU

FQI4N20LTU

MOSFET N-CH 200V 3.8A I2PAK

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FQI4N20LTU

FQI4N20LTU

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Part No :

FQI4N20LTU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 3.8A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
214821 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 11 - Nov 15 2025
PDF
FQI4N20LTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI4N20LTU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI4N20LTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI4N20LTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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