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FQD2N30TM

FQD2N30TM

MOSFET N-CH 300V 1.7A DPAK

FQD2N30TM

FQD2N30TM

Image is for reference, please contact us to get the real picture

Part No :

FQD2N30TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 300V 1.7A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
068006 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 18 - Jun 22 2025
PDF
FQD2N30TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N30TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD2N30TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD2N30TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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