







RES SMD 59 OHM 0.25% 1/4W 1206
XTAL OSC XO 19.6620MHZ CMOS SMD
CONN RCPT FMALE 23POS GOLD CRIMP
MOSFET N-CH 55V 60A TO262
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 63 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3750 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.8W (Ta), 105W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-262 |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
5HP01C-TB-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 70MA CP3 |
|
|
JANTXV2N7225UMicrosemi |
MOSFET N-CH 200V 27.4A TO267AB |
|
|
EPC2050EPC |
TRANS GAN BUMPED DIE |
|
|
RJK1052DPB-WS#J5Renesas Electronics America |
IGBT |
|
|
IPC60N04S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 60A TDSON-8-23 |
|
|
JANTXV2N6802UMicrosemi |
MOSFET N-CH 500V 2.5A 18ULCC |
|
|
SI5476DU-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 12A PPAK |
|
|
IXTD5N100AWickmann / Littelfuse |
MOSFET N-CH 1000V 5A DIE |
|
|
JAN2N6798Microsemi |
MOSFET N-CH 200V 5.5A TO39 |
|
|
IRFC240NBIR (Infineon Technologies) |
MOSFET 200V DIE |
|
|
R6030ENZM12C8ROHM Semiconductor |
MOSFET N-CH 600V 30A TO3 |
|
|
AON6332Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 5X6 DFN |
|
|
SUD50P04-08-E3Vishay / Siliconix |
MOSFET P-CH 40V DPAK |