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SI5476DU-T1-E3

SI5476DU-T1-E3

MOSFET N-CH 60V 12A PPAK

SI5476DU-T1-E3

SI5476DU-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI5476DU-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 12A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
458545 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 14 - Jun 18 2025
PDF
SI5476DU-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:34mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® ChipFet Single
Package / Case:PowerPAK® ChipFET™ Single
SI5476DU-T1-E3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI5476DU-T1-E3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI5476DU-T1-E3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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