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APTM100DA18CT1G

APTM100DA18CT1G

MOSFET N-CH 1000V 40A SP1

APTM100DA18CT1G

APTM100DA18CT1G

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Part No :

APTM100DA18CT1G

Manufacturer
Microsemi
Description
MOSFET N-CH 1000V 40A SP1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
879087 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 23 - Jul 27 2025
Type Description
Series:POWER MOS 8™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:570 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):657W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SP1
Package / Case:SP1
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