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2SK3906(Q)

2SK3906(Q)

Image is for reference, please contact us to get the real picture

Part No :

2SK3906(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 20A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
704470 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 13 - Jul 17 2025
PDF
2SK3906(Q) PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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