SWITCH SNAP ACTION SPDT 15A 125V
MOSFET P-CH 60V 1.9A SOT223-4
SWITCH TOGGLE DPDT 5A 120V
SENSOR 75PSI M10-1.25 6H .5-4.5V
Type | Description |
---|---|
Series: | SIPMOS® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 300mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 460µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 460 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRLH5036TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 20A/100A 8PQFN |
![]() |
2SK3906(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO3P |
![]() |
PHD18NQ10T,118NXP Semiconductors |
MOSFET N-CH 100V 18A DPAK |
![]() |
SI5853DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 1206-8 |
![]() |
IRF6724MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 27A DIRECTFET |
![]() |
IRF1310NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A D2PAK |
![]() |
IPA90R340C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO220-FP |
![]() |
IRLR7811WPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |
![]() |
SIR642DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
![]() |
SI4451DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 10A 8SO |
![]() |
SI5402DC-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 4.9A 1206-8 |
![]() |
ATP104-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 75A ATPAK |
![]() |
RP1E100RPTRROHM Semiconductor |
MOSFET P-CH 30V 10A MPT6 |